Jean Camassel : rechercher sur Z-Library

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1

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

Maya Marinova, Georgios Zoulis, Teddy Robert, Frederic Mercier, Alkioni Mantzari, Irina Galben, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Ef

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 389 KB

english, 2009

2

4H-SiC: a material for high temperature Hall sensor

Jean-Louis Robert, Sylvie Contreras, Jean Camassel, Julien Pernot, Eric Neyret, Léa Di Cioccio, Thierry Billon

Journal:

Sensors and Actuators A: Physical

Année:

2002

Langue:

english

Fichier:

PDF, 186 KB

english, 2002

3

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

Nicolas Camara, Benoit Jouault, Bilal Jabakhanji, Alessandra Caboni, Antoine Tiberj, Christophe Consejo, Philipe Godignon, Jean Camassel

Journal:

Nanoscale Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2011

4

Growth of Cubic Silicon Carbide Crystals from Solution

Eid, Jessica, Santailler, Jean Louis, Ferrand, Bernard, Ferret, Pierre, Pesenti, J., Basset, Alain, Passero, Antoine, Mantzari, A., Polychroniadis, E.K., Balloud, Carole, Soares, P., Camassel, Jean

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 298 KB

english, 2006

5

Experimental Investigation of 4H-SiC Bulk Crystal Growth

Chourou, K., Anikin, Mikhail, Bluet, Jean Marie, Lauer, V., Guillot, Gérard, Camassel, Jean, Juillaguet, Sandrine, Chaix-Pluchery, O., Pons, Michel, Pons, R.

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 371 KB

1998

6

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Contreras, Sylvie, Zielinski, Marcin, Konczewicz, Leszek, Blanc, Caroline, Juillaguet, Sandrine, Müller, Ralf, Künecke, Ulrike, Wellmann, Peter J., Camassel, Jean

Journal:

Materials Science Forum

Année:

2006

Langue:

english

Fichier:

PDF, 774 KB

english, 2006

7

Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution

Eid, Jessica, Santailler, Jean Louis, Ferrand, Bernard, Rolland, Guy, Burdin, Michel, Lewandowska, R., Camassel, Jean

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 332 KB

english, 2007

8

SiC In-Situ Pre-Growth Etching: A Thermodynamic Study

Neyret, E., Di Cioccio, Lea, Blanquet, Elisabeth, Raffy, C., Pudda, C., Billon, Thierry, Camassel, Jean

Journal:

Materials Science Forum

Année:

2000

Langue:

english

Fichier:

PDF, 327 KB

english, 2000

9

Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic Pressure

Azema, S., Mosser, V., Camassel, Jean, Piotrzkowski, R., Robert, Jean-Louis, Gibart, Pierre, Contour, J.-P., Massié, J., Marty, A.

Journal:

Materials Science Forum

Année:

1989

Fichier:

PDF, 416 KB

1989

10

Reactive ion etching of 6H-SiC in an ECR plasma of CF4-O2 mixtures using both Ni and Al masks

Alexander L. Syrkin, Jean Marie Bluet, Jean Camassel, Roger Bonnot

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 520 KB

english, 1997

11

SiC materials: a semiconductor family for the next century

Jean Camassel, Sylvie Contreras, Jean-Louis Robert

Journal:

Comptes Rendus de l'Académie des Sciences - Series IV - Physics-Astrophysics

Année:

2000

Langue:

french

Fichier:

PDF, 978 KB

french, 2000

12

Advanced materials nanocharacterization

Filippo Giannazzo, Pierre Eyben, Jacek Baranowski, Jean Camassel, Stefan Lányi

Journal:

Nanoscale Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 135 KB

english, 2011

13

Multiscale investigation of graphene layers on 6H-SiC(000-1)

Antoine Tiberj, Jean-Roch Huntzinger, Jean Camassel, Fanny Hiebel, Ather Mahmood, Pierre Mallet, Cecile Naud, Jean-Yves Veuillen

Journal:

Nanoscale Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1.66 MB

english, 2011

14

Technical aspects of 〈〉 4H–SiC MOSFET processing

C. Blanc, D. Tournier, V. Soulière, S. Juillaguet, S. Contreras, M. Zielinski, P. Godignon, Y. Monteil, Jean Camassel

Journal:

physica status solidi (a)

Année:

2005

Langue:

english

Fichier:

PDF, 192 KB

english, 2005

15

Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition

Maya Marinova, Teddy Robert, Sandrine Juillaguet, Ioannis Tsiaoussis, Nikolaos Frangis, Efstathios Polychroniadis, Jean Camassel, Thierry Chassagne

Journal:

physica status solidi (a)

Année:

2009

Langue:

english

Fichier:

PDF, 17.06 MB

english, 2009

16

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Antoine Tiberj, Nicolas Camara, Philippe Godignon, Jean Camassel

Journal:

Nanoscale Research Letters

Année:

2011

Langue:

english

Fichier:

PDF, 488 KB

english, 2011

17

Peritraumatic reactions and posttraumatic stress symptoms in school-aged children victims of road traffic accident

Eric Bui, Alain Brunet, Charlotte Allenou, Cécile Camassel, Jean-Philippe Raynaud, Isabelle Claudet, Frédéric Fries, Jean-Philippe Cahuzac, Hélène Grandjean, Laurent Schmitt, Philippe Birmes

Journal:

General Hospital Psychiatry

Année:

2010

Langue:

english

Fichier:

PDF, 119 KB

english, 2010

18

Depth Profiling of High-Energy Hydrogen-Implanted 6H-SiC

Brink, Daniel J., Maurice, Thibaut, Blanque, Servane, Kunert, H., Camassel, Jean, Pascual, Jordi

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 174 KB

english, 2004

19

Trends in Dopant Incorporation for 3C-SiC Films on Silicon

Zielinski, Marcin, Portail, Marc, Peyre, Hervé, Chassagne, Thierry, Ndiaye, S., Boyer, Bernard, Leycuras, André, Camassel, Jean

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 270 KB

english, 2007

20

-type doped

Ferreira da Silva, Antonio, Pernot, Julien, Contreras, Sylvie, Sernelius, Bo E., Persson, Clas, Camassel, Jean

Journal:

Physical Review B

Année:

2006

Langue:

english

Fichier:

PDF, 99 KB

english, 2006

21

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

Soueidan, Maher, Ferro, Gabriel, Nsouli, Bilal, Roumie, Mohamad, Polychroniadis, Efstathios, Kazan, Michel, Juillaguet, Sandrine, Chaussende, Didier, Habka, Nada, Stoemenos, John, Camassel, Jean, Mont

Journal:

Crystal Growth & Design

Année:

2006

Langue:

english

Fichier:

PDF, 311 KB

english, 2006

22

Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane

Sartel, C., Soulière, Veronique, Zielinski, Marcin, Monteil, Yves, Camassel, Jean, Rushworth, S.

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 318 KB

english, 2005

23

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite

Wollweber, Jürgen, Mantzari, A., Polychroniadis, E.K., Balloud, Carole, Freudenberg, A., Nitschke, R., Camassel, Jean

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2004

24

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

Zoulis, Georgios, Sun, Jian Wu, Galben-Sandulache, Irina G., Sun, Guoli L., Juillaguet, Sandrine, Ouisse, Thierry, Chaussende, Didier, Madar, Roland, Camassel, Jean

Journal:

Materials Science Forum

Année:

2011

Langue:

english

Fichier:

PDF, 297 KB

english, 2011

25

Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies

Jang, Yeon Suk, Sakwe, Sakwe Aloysius, Wellmann, Peter J., Juillaguet, Sandrine, Peyre, Hervé, Camassel, Jean, Steeds, John W.

Journal:

Materials Science Forum

Année:

2007

Langue:

english

Fichier:

PDF, 294 KB

english, 2007

26

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

Juillaguet, Sandrine, Camassel, Jean

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 308 KB

english, 2005

27

-SiC

Camara, Nicolas, Huntzinger, Jean-Roch, Rius, Gemma, Tiberj, Antoine, Mestres, Narcis, Pérez-Murano, Francesc, Godignon, Philippe, Camassel, Jean

Journal:

Physical Review B

Année:

2009

Langue:

english

Fichier:

PDF, 686 KB

english, 2009

28

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

Sun, J.W., Robert, T., Jokubavicius, Valdas, Juillaguet, Sandrine, Yakimova, Rositza, Syväjärvi, Mikael, Camassel, Jean

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2012

29

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

Kwasnicki, Pawel, Arvinte, Roxana, Peyre, Herve, Zielinski, Marcin, Konczewicz, Leszek, Contreras, Sylvie, Camassel, Jean, Juillaguet, Sandrine

Journal:

Materials Science Forum

Année:

2014

Langue:

english

Fichier:

PDF, 642 KB

english, 2014

30

AFM and Raman Studies of Graphene Exfoliated on SiC

Tiberj, Antoine, Martin, Marta, Camara, Nicolas, Poncharal, P., Michel, T., Sauvajol, J.L., Godignon, Phillippe, Camassel, Jean

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 748 KB

english, 2009

31

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, Jean-Louis, Contreras, Sylvie, Camassel, Jean, Pernot, Julien, Juillaguet, Sandrine, Di Cioccio, Lea, Billon, Thierry

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 329 KB

2002

32

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Eid, Jessica, Galben, Irina G., Zoulis, G., Robert, T., Chaussende, Didier, Juillaguet, Sandrine, Tiberj, Antoine, Camassel, Jean

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 611 KB

english, 2009

33

Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates

Camara, Nicolas, Huntzinger, J.R., Tiberj, Antoine, Rius, G., Jouault, B., Pérez-Murano, Francesco, Mestres, Narcis, Godignon, Phillippe, Camassel, Jean

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 2.82 MB

english, 2009

34

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation

Blanqué, Servane, Lyonnet, J., Camassel, Jean, Pérez, R., Terziyska, P., Contreras, Sylvie, Godignon, Phillippe, Mestres, Narcis, Pascual, Jordi

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 277 KB

english, 2005

35

Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3

Allègre, J., Lefebvre, P., Camassel, Jean, Beaumont, B., Gibart, Pierre

Journal:

Materials Science Forum

Année:

1998

Fichier:

PDF, 368 KB

1998

36

Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity

Oehlschläger, Felix, Juillaguet, Sandrine, Peyre, Hervé, Camassel, Jean, Wellmann, Peter J.

Journal:

Materials Science Forum

Année:

2009

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2009

37

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

Pernot, Julien, Contreras, Sylvie, Camassel, Jean, Robert, Jean-Louis

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 466 KB

english, 2005

38

Differences between Graphene Grown on Si-Face and C-Face

Camara, Nicolas, Caboni, A., Huntzinger, Jean Roch, Tiberj, Antoine, Mestres, Narcis, Godignon, Phillippe, Camassel, Jean

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 637 KB

english, 2010

39

Optical Characterization of SiC Materials: Bulk and Implanted Layers

Camassel, Jean, Vicente, Patrice, Falkovski, L.

Journal:

Materials Science Forum

Année:

2001

Fichier:

PDF, 424 KB

2001

40

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Jacquier, Christophe, Ferro, Gabriel, Balloud, Carole, Zielinski, Marcin, Camassel, Jean, Polychroniadis, E.K., Stoemenos, J., Cauwet, François, Monteil, Yves

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 817 KB

english, 2004

41

Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

Skorupa, Wolfgang, Panknin, D., Anwand, W., Voelskow, M., Ferro, Gabriel, Monteil, Yves, Leycuras, André, Pezoldt, Jörg, McMahon, R.A., Smith, M., Camassel, Jean, Stoemenos, J., Polychroniadis, E.K.,

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2004

42

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Juillaguet, Sandrine, Zielinski, Marcin, Balloud, Carole, Sartel, C., Consejo, C., Boyer, Bernard, Soulière, Veronique, Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 627 KB

english, 2004

43

Characterization of 3C-SiC/SOI Deposited with HMDS

Planes, N., Dupel, P., Ravetz, M., Contreras, Sylvie, Vicente, Patrice, Chassagne, Thierry, Fraisse, B., Camassel, Jean, Monteil, Yves, Rushworth, S.

Journal:

Materials Science Forum

Année:

2000

Langue:

english

Fichier:

PDF, 338 KB

english, 2000

44

Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

Vicente, Patrice, Pernot, Etienne, Chaussende, Didier, Camassel, Jean

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 329 KB

2002

45

Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)

Jabakhanji, Bilal, Camara, Nicolas, Caboni, Alessandra, Consejo, Christophe, Jouault, Benoit, Godignon, Philippe, Camassel, Jean

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 2.03 MB

english, 2012

46

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Chaussende, Didier, Balloud, Carole, Auvray, Laurent, Baillet, Francis, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Année:

2004

Langue:

english

Fichier:

PDF, 399 KB

english, 2004

47

Is the Al Solubility Limit in SiC Temperature Dependent or not?

Jacquier, Christophe, Ferro, Gabriel, Zielinski, Marcin, Polychroniadis, E.K., Andreadou, A., Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2005

48

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

Camassel, Jean, Juillaguet, Sandrine

Journal:

Materials Science Forum

Année:

2005

Langue:

english

Fichier:

PDF, 350 KB

english, 2005

49

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

Robert, Teddy, Marinova, Maya, Juillaguet, Sandrine, Henry, Anne, Polychroniadis, Efstathios K., Camassel, Jean

Journal:

Materials Science Forum

Année:

2010

Langue:

english

Fichier:

PDF, 641 KB

english, 2010

50

Growth at High Rates and Characterization of Bulk 3C-SiC Material

Ferro, Gabriel, Balloud, Carole, Juillaguet, Sandrine, Vicente, Patrice, Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Année:

2003

Fichier:

PDF, 378 KB

2003